Role of dislocation scattering on electron mobility in coalescent epitaxial lateral overgrowth layers of InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864016
Reference18 articles.
1. Selective Silicon Epitaxy Using Reduced Pressure Technique
2. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
3. Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
4. Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy
5. Preparation of large GaN substrates
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