EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1755045
Reference5 articles.
1. Electroluminescence and Lasing Action in GaAsxP1−x
2. Injection Electroluminescence in (AlxGa1−x)As Diodes of Graded Energy Gap
3. Optical and Electrical Properties of Epitaxial and Diffused GaAs Injection Lasers
4. Preparation and Properties of Solution‐Grown Epitaxialp—nJunctions in GaP
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