Preparation and Properties of Solution‐Grown Epitaxialp—nJunctions in GaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1707981
Reference18 articles.
1. Electroluminescent devices using carrier injection in gallium phosphide
2. Efficiency of recombination radiation in GaP
3. RADIATIVE RECOMBINATION IN GaPp‐nAND TUNNEL JUNCTIONS
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