Injection Electroluminescence in (AlxGa1−x)As Diodes of Graded Energy Gap
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1707915
Reference18 articles.
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Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Theoretical Study of Band Structure of AlxGa1?xAs by Means of the Recursion Method;physica status solidi (b);1998-11
2. Determination of epitaxial AlxGa1−xAs composition from x‐ray diffraction measurements;Applied Physics Letters;1991-10-28
3. Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement ofx;Applied Physics Letters;1987-08-17
4. Resonant Raman scattering by LO phonons inAlxGa1−xAs (x< 0.1): Alloying and interference effects;Physical Review B;1987-05-15
5. Heterostructure lasers;IEEE Transactions on Electron Devices;1984-11
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