Electroluminescence and Lasing Action in GaAsxP1−x
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1714202
Reference26 articles.
1. Band Structure and Transport Properties of Some 3–5 Compounds
2. Conduction Band Minima ofGa(As1−xPx)
3. Band Structure of Gallium Phosphide from Optical Experiments at High Pressure
4. Pressure Effect on Resistivity ofGa(As1−xPx)
5. THE ``DIRECT‐INDIRECT'' TRANSITION IN Ga(As1−xPx) p‐n JUNCTIONS
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