Hot carrier luminescence during porous etching of GaP under high electric field conditions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference34 articles.
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1. Characterization of epitaxial n-GaP/p-PSi heterojunctions;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2010-02
2. Preparation and Photoelectrochemical Activity of Macroporous p-GaP(100);Journal of The Electrochemical Society;2010
3. Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC;Electrochemical and Solid-State Letters;2009
4. The Electrochemistry of Porous Semiconductors;Electrochemistry at the Nanoscale;2009
5. Varied morphology of porous GaP(111) formed by anodization;Journal of Alloys and Compounds;2008-04
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