Author:
Sasaoka C,Sunakawa H,Kimura A,Nido M,Usui A,Sakai A
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
2. The Blue Laser Diode;Nakamura,1997
3. G.E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, M. Leonard, H.S. Kong, H. Dieringer, C. Carter, J. Edmond, Device Research Conf. vol. IV-B-8, 1997.
4. S. Porowski, J.M. Baranowski, M. Leszczynski, J. Jun, M. Bockowski, I. Grzegory, S. Krukowski, M. Wroblewski, B. Lucznik, G. Nowak, K. Pakula, A. Wysmolek, K.P. Korona, R. Stepniewski, Proc. Int. Symp. Blue Laser, and Light Emitting Diodes, Chiba, Ohmsha, Tokyo, 1996, p. 38.
5. Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
Cited by
92 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献