Effects of three-dimensional strain distribution on the performance of GaN-based light-emitting diodes on patterned sapphire substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab09d6/pdf
Reference33 articles.
1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
4. Optical Disk Recording Using a GaN Blue-Violet Laser Diode
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth;Vacuum;2022-03
2. Growth Dynamics of Epitaxial Gallium Nitride Films Grown on c-Sapphire Substrates;Recent Advances in Thin Films;2020
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