Ultrascaled Double-Gate Monolayer SnS2 MOSFETs for High-Performance and Low-Power Applications-Reference-Cited by-同舟云学术

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Ultrascaled Double-Gate Monolayer SnS2 MOSFETs for High-Performance and Low-Power Applications

Published:2020-10-19 Issue:4 Volume:14 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Guo Shiying,Wang Yangyang,Hu Xuemin,Zhang Shengli^ORCID,Qu Hengze,Zhou Wenhan^ORCID,Wu Zhenhua^ORCID,Liu Xuhai,Zeng Haibo^ORCID

Funder

NSFC

Natural Science Foundation of Jiangsu Province

Fundamental Research Funds for the Central Universities

Qing Lan Project of Jiangsu Province, and the Six Talent Peaks Project of Jiangsu Province

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.14.044031/fulltext

Reference55 articles.

1. Metrology for the next generation of semiconductor devices

2. The era of hyper-scaling in electronics

3. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

4. Graphene and two-dimensional materials for silicon technology

5. How 2D semiconductors could extend Moore’s law

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1. Device Transport Characteristics of Monolayer SnS₂ and HfS₂ Field-Effect Transistors with Semimetal Contacts;The Journal of Physical Chemistry C;2024-08-15

2. Theoretical dissection of the electronic anisotropy and quantum transport of ultrascaled halogenated borophene MOSFETs;Physical Review Applied;2024-05-07

3. Photogating enhanced photodetectors dominated by rubrene nanodots modified SnS₂ films;2D Materials;2024-01-11

4. Comprehensive Analytical Model for Exploring the Dominant Scattering Mechanism of Two-Dimensional MoS₂ FETs;IEEE Access;2024

5. Nucleation preference and lateral growth of monolayer tin disulfide on graphene;Journal of Materials Chemistry C;2024

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