Theoretical dissection of the electronic anisotropy and quantum transport of ultrascaled halogenated borophene MOSFETs-Reference-Cited by-同舟云学术

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Theoretical dissection of the electronic anisotropy and quantum transport of ultrascaled halogenated borophene MOSFETs

Published:2024-05-07 Issue:5 Volume:21 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Guo Shiying¹²,Wang Ying¹,Qu Hengze²,Zhou Wenhan²,Ang Yee Sin³^ORCID,Zhang Shengli²,Zeng Haibo²

Affiliation:

1. College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China

2. MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

3. Science, Mathematics and Technology, Singapore University of Technology and Design, Singapore 487372, Singapore

Funder

Major Research Plan

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Central

Qing Lan Project

Six Talent Peaks Project of Jiangsu Province

Singapore Ministry of Education

Academic Research Fund

Fundamental Research Funds

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.21.054016/fulltext

Reference61 articles.

1. Electronics based on two-dimensional materials

2. The era of hyper-scaling in electronics

3. Two-dimensional semiconductors for transistors

4. Electronics based on two-dimensional materials: Status and outlook

5. Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

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