Author:
Chhowalla Manish,Jena Debdeep,Zhang Hua
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Surfaces, Coatings and Films,Energy (miscellaneous),Biomaterials,Electronic, Optical and Magnetic Materials
Reference129 articles.
1. Moore, G. E. Cramming more components onto integrated circuits. Electronics 38, 114–177 (1965).
2. Dennard, R. H., Gaensslen, F. H., Rideout, V. L., Bassous, E. & LeBlanc, A. R. Design of ion-implanted MOSFET's with very small physical dimensions. IEEE J. Solid-State Circ. 9, 256–268 (1974).
3. Mistry, K. et al. A 45 nm logic technology with high-k+ metal gate transistors, strained silicon, 9 Cu interconnect layers, 193 nm dry patterning, and 100% Pb-free packaging. IEEE Int. Electron Devices Meet. 247–250 (IEEE, 2007).
4. Cartwright, J. Intel enters the third dimension. Nature
http://www.nature.com/news/2011/110506/full/news.2011.274.html
(2011).
5. Waldrop, M. M. The chips are down for Moore's law. Nature 530, 144–147 (2016).
Cited by
1080 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献