Nucleation preference and lateral growth of monolayer tin disulfide on graphene-Reference-Cited by-同舟云学术

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Nucleation preference and lateral growth of monolayer tin disulfide on graphene

Published:2024 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lin Gaoxiang¹,Gao Huimin¹,Fang Yimei¹,Huang Chenyi¹,Huang Junjie¹,Lu Jie¹,Cao Xinrui¹^ORCID,Zhang Yufeng¹^ORCID,Zhang Xueao¹^ORCID,Wu Shunqing¹^ORCID,Cai Weiwei¹^ORCID,Zhou Yinghui¹^ORCID

Affiliation:

1. Department of Physics, OSED, Key Laboratory of Low-dimensional Condensed Matter Physics (Department of Education of Fujian Province), Xiamen University, Xiamen 361005, China

Abstract

Herein we investigate the nucleation and growth of SnS2 on graphene, and further achieve a large-area SnS2/graphene hetero-bilayer.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC03002H

Reference42 articles.

1. Layer‐Dependent Optical Modulation and Field‐Effect‐Transistor in Two‐Dimensional 4H‐SnS₂ Layers

2. Ultrascaled Double-Gate Monolayer SnS2 MOSFETs for High-Performance and Low-Power Applications

3. Chemical Vapor Deposition of Thin Crystals of Layered Semiconductor SnS2 for Fast Photodetection Application

4. Graphene/SnS2 van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365–2240 nm Detection

5. High‐Performance van der Waals Metal‐Insulator‐Semiconductor Photodetector Optimized with Valence Band Matching

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