Comprehensive Analytical Model for Exploring the Dominant Scattering Mechanism of Two-Dimensional MoS<sub>2</sub> FETs-Reference-Cited by-同舟云学术

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Comprehensive Analytical Model for Exploring the Dominant Scattering Mechanism of Two-Dimensional MoS₂ FETs

Published:2024 Issue: Volume:12 Page:120087-120097
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Noor Fatimah Arofiati¹^ORCID,Syuhada Ibnu²^ORCID,Winata Toto¹,Khairurrijal Khairurrijal¹

Affiliation:

1. Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung, Indonesia

2. Yayasan Cahaya Putra Ilmu, Cilegon, Banten, Indonesia

Funder

Institut Teknologi Bandung (ITB) through the “Riset Unggulan ITB”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6287639/10380310/10646339.pdf?arnumber=10646339

Reference40 articles.

1. Single-particle relaxation time versus scattering time in an impure electron gas

2. Single-particle relaxation time versus transport scattering time in a two-dimensional graphene layer

3. Magnetization Dynamics in FexCo1-x in Presence of Chemical Disorder

4. Magnon-phonon interactions in magnetic insulators

5. First-principles method for electron-phonon coupling and electron mobility: Applications to two-dimensional materials

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