Structural stability and scanning tunneling microscopy images of strained Ge films on Si(001)
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.87.075323/fulltext
Reference26 articles.
1. Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates
2. Band offset induced threshold variation in strained-Si nMOSFETs
3. Germanium channel MOSFETs: Opportunities and challenges
4. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
5. Strain relaxation in high Ge content SiGe layers deposited on Si
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