Strain relaxation in high Ge content SiGe layers deposited on Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3327435
Reference38 articles.
1. Germanium channel MOSFETs: Opportunities and challenges
2. High-k/Ge MOSFETs for future nanoelectronics
3. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition
4. Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature
5. High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process
Cited by 67 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz;Nanophotonics;2024-01-15
2. Hexagonal-Ge Nanostructures with Direct-Bandgap Emissions in a Si-Based Light-Emitting Metasurface;ACS Nano;2023-12-26
3. Vibrational Properties and Raman Peak Shift Relationships in Si1−xGex Epilayers Grown on Annealed Double Porous Silicon;Revue des composites et des matériaux avancés;2023-10-31
4. Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001);Applied Physics Letters;2023-06-12
5. Concurrent Characterization of Surface Diffusion and Intermixing of Ge on Si: A Classical Molecular Dynamics Study;Advanced Theory and Simulations;2023-03-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3