High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz
Author:
Campagna Elena1ORCID, Talamas Simola Enrico1ORCID, Venanzi Tommaso2, Berkmann Fritz3, Corley-Wiciak Cedric4, Nicotra Giuseppe5, Baldassarre Leonetta3, Capellini Giovanni14, Di Gaspare Luciana1, Virgilio Michele6, Ortolani Michele23ORCID, De Seta Monica1
Affiliation:
1. Dipartimento di Scienze , Università; degli Studi Roma Tre , Viale G. Marconi 446 , Roma 00146 , Italy 2. Center for Life Nano & Neuro Science , Istituto Italiano di Tecnologia , Viale Regina Elena 291, 00161 Rome , Italy 3. Department of Physics , “Sapienza” Università di Roma , Piazzale Aldo Moro 2, 00185 Rome , Italy 4. IHP-Leibniz Institut für Innovative Mikroelektronik , Im Technologiepark 25 , Frankfurt (Oder) 15236 , Germany 5. Istituto per la Microelettronica e Microsistemi (CNR-IMM) , VIII Strada 5 , Catania 95121 , Italy 6. Dipartimento di Fisica “E. Fermi” , Università; di Pisa , Largo Pontecorvo 3 , Pisa 56127 , Italy
Abstract
Abstract
A parabolic potential that confines charge carriers along the growth direction of quantum wells semiconductor systems is characterized by a single resonance frequency, associated to intersubband transitions. Motivated by fascinating quantum optics applications leveraging on this property, we use the technologically relevant SiGe material system to design, grow, and characterize n-type doped parabolic quantum wells realized by continuously grading Ge-rich Si1−x
Ge
x
alloys, deposited on silicon wafers. An extensive structural analysis highlights the capability of the ultra-high-vacuum chemical vapor deposition technique here used to precisely control the quadratic confining potential and the target doping profile. The absorption spectrum, measured by means of Fourier transform infrared spectroscopy, revealed a single peak with a full width at half maximum at low and room temperature of about 2 and 5 meV, respectively, associated to degenerate intersubband transitions. The energy of the absorption resonance scales with the inverse of the well width, covering the 2.5–5 THz spectral range, and is almost independent of temperature and doping, as predicted for a parabolic confining potential. On the basis of these results, we discuss the perspective observation of THz strong light–matter coupling in this silicon compatible material system, leveraging on intersubband transitions embedded in all-semiconductor microcavities.
Funder
Regione Lazio Ministero dell’Istruzione e del Merito
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
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