Hexagonal-Ge Nanostructures with Direct-Bandgap Emissions in a Si-Based Light-Emitting Metasurface-Reference-Cited by-同舟云学术

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Hexagonal-Ge Nanostructures with Direct-Bandgap Emissions in a Si-Based Light-Emitting Metasurface

Published:2023-12-26 Issue:1 Volume:18 Page:328-336
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zhang Ningning¹²,Yan Jia¹,Wang Liming²^ORCID,Zhang Jiarui¹,Zhang Zhifang¹,Miao Tian²,Zheng Changlin¹,Jiang Zuimin¹,Hu Huiyong²,Zhong Zhenyang¹^ORCID

Affiliation:

1. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, P. R. China

2. Key Laboratory of Analog Integrated Circuits and Systems, Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, P. R. China

Funder

National Key Research and Development Program of China

Natural Science Basic Research Program of Shaanxi Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c06279

Reference49 articles.

1. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip

2. Silicon integrated circuits shine

3. Gaining light from silicon

4. Silicon chips lighten up

5. An all-silicon laser based on silicon nanocrystals with high optical gains

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