Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates-Reference-Cited by-同舟云学术

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Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates

Published:2007-12-17 Issue:25 Volume:91 Page:252111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cannon Douglas D.,Liu Jifeng,Danielson David T.,Jongthammanurak Samerkhae,Enuha Uchechukwu U.,Wada Kazumi,Michel Jurgen,Kimerling Lionel C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2825410

Reference22 articles.

1. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

2. Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures

3. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

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