Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates-Reference-Cited by-同舟云学术

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Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

Published:2001-11-12 Issue:20 Volume:79 Page:3344-3346
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Minjoo L.,Leitz C. W.,Cheng Z.,Pitera A. J.,Langdo T.,Currie M. T.,Taraschi G.,Fitzgerald E. A.,Antoniadis Dimitri A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1417515

Reference18 articles.

1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

3. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

4. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

5. High-mobility strained-Si PMOSFET's

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