Band offset induced threshold variation in strained-Si nMOSFETs-Reference-Cited by-同舟云学术

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Band offset induced threshold variation in strained-Si nMOSFETs

Published:2003-09 Issue:9 Volume:24 Page:568-570
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jung-Suk Goo ,Qi Xiang ,Takamura Y.,Arasnia F.,Paton E.N.,Besser P.,Pan J.,Ming-Ren Lin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27489/01224520.pdf?arnumber=1224520

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