Electronic structure of the Ge/Si(1 0 5) hetero-interface: an ARPES and DFT study
Author:
Funder
Horizon 2020 Framework Programme
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://iopscience.iop.org/article/10.1088/1361-648X/aae66f/pdf
Reference42 articles.
1. Structural properties of self-organized semiconductor nanostructures
2. Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset
3. Shaping Ge Islands on Si(001) Surfaces with Misorientation Angle
4. Growth and self-organization of SiGe nanostructures
5. Structural stability and scanning tunneling microscopy images of strained Ge films on Si(001)
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1. Three-dimensional angle-resolved photoemission study of bulk SiGe single crystals;APL Materials;2023-04-01
2. New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation;Applied Surface Science;2022-01
3. Steps and Ge epitaxy on vicinal Si (111) surfaces: An STM study;Surface Science;2020-06
4. TPD characterization of Al-OD-Si sites at the interface of bilayer Al0.42Si0.58O2/Ru(0001) thin-films.;Surface Science;2020-06
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