Shaping Ge Islands on Si(001) Surfaces with Misorientation Angle
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.104.036104/fulltext
Reference28 articles.
1. Quantum dots for lasers, amplifiers and computing
2. Photoluminescence Efficiency of Self-Assembled Ge Nanocrystals
3. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
4. Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)
5. Prepyramid-to-pyramid transition of SiGe islands on Si(001)
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2. Evolution of Ge Wetting Layers Growing on Smooth and Rough Si (001) Surfaces: Isolated {105} Facets as a Kinetic Factor of Stress Relaxation;SSRN Electronic Journal;2022
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