Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.85.3672/fulltext
Reference27 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
3. Transition States Between Pyramids and Domes During Ge/Si Island Growth
4. STM study of the Ge growth mode on Si(001) substrates
5. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
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