Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.65.1020/fulltext
Reference15 articles.
1. Theory of silicon superlattices: Electronic structure and enhanced mobility
2. Modulation doping in GexSi1−x/Si strained layer heterostructures
3. Avalanche gain in GexSi1-x/Si infrared waveguide detectors
4. Structurally induced optical transitions in Ge-Si superlattices
5. Heteroepitaxy of vacuum‐evaporated Ge films on single‐crystal Si
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