Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers
Author:
Affiliation:
1. Kroto Centre for High-Resolution Imaging and Analysis; Department of Electronic and Electrical Engineering; University of Sheffield; Sheffield U.K.
2. Department of Physics; University of Warwick; Coventry U.K.
Funder
Engineering and Physical Sciences Research Council
Publisher
Wiley
Subject
Histology,Pathology and Forensic Medicine
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/jmi.12654/fullpdf
Reference50 articles.
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3. Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal Si(110) substrates;Arimoto;J. Cryst. Growth,2009b
4. Growth and characterization of Si1-xGex and Ge epilayers in (100)Si;Baribeau;J. Appl. Phys.,1988
5. Pyramids and domes in the InAs/GaAs(001) and Ge/Si(001) systems;Costantini;J. Cryst. Growth,2005
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