Growth and characterization of Si1−xGexand Ge epilayers on (100) Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340312
Reference28 articles.
1. Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
2. Dislocation reduction in epitaxial GaAs on Si(100)
3. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
4. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
5. Dislocation filtering in semiconductor superlattices with lattice‐matched and lattice‐mismatched layer materials
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