Complementary metal oxide semiconductor (CMOS) compatible gallium arsenide metal-semiconductor-metal photodetectors (GaAs MSMPDs) on silicon using ultra-thin germanium buffer layer for visible photonic applications-Reference-Cited by-同舟云学术

Complementary metal oxide semiconductor (CMOS) compatible gallium arsenide metal-semiconductor-metal photodetectors (GaAs MSMPDs) on silicon using ultra-thin germanium buffer layer for visible photonic applications

Published:2019-11-21 Issue:19 Volume:126 Page:193106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dushaq Ghada¹^ORCID,Nayfeh Ammar²^ORCID,Rasras Mahmoud¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, New York University Abu Dhabi, P.O. Box 129188, Abu Dhabi 129188, United Arab Emirates

2. Electrical Engineering and Computer Science (EECS), Khalifa University, P O Box 127788, Abu Dhabi 127788, United Arab Emirates

Funder

New York University Abu Dhabi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5120705

Reference57 articles.

1. Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver

2. CMOS Silicon Receiver Integrated With Ge Detector and Reconfigurable Optical Filter

3. Monolithically Integrated Ge-on-Si Active Photonics

4. Recent advances in silicon-based passive and active optical interconnects

5. On-chip wireless silicon photonics: from reconfigurable interconnects to lab-on-chip devices

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