Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer-Reference-Cited by-同舟云学术

Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer

Published:2022-04-15 Issue:13 Volume:10 Page:2200062
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Liao Yikai¹,Zheng Yixiong²,Shin Sang‐Ho¹,Zhao Zhi‐Jun³,An Shu¹,Seo Jung‐Hun²,Jeong Jun‐Ho³,Kim Munho¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore

2. Department of Materials Design and Innovation University at Buffalo The State University of New York Buffalo NY 14260 USA

3. Nano‐Convergence Mechanical Systems Research Division Korea Institute of Machinery and Materials 156, Gajeongbuk‐ro, Yuseong‐gu Daejeon 34103 South Korea

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202200062

Reference59 articles.

1. Reconstruction of the (001) Surface of Si from Molecular Dynamics

2. Gallium arsenide electronics

3. High-efficiency GaAs solar cells

4. Progress in Gallium Arsenide Semiconductors

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