Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants
Author:
Affiliation:
1. CNR-IMM, Unit of Agrate Brianza
2. I-20864 Agrate Brianza
3. Italy
4. Università degli Studi di Milano
5. I-20133 Milano
6. Università del Piemonte Orientale “A. Avogadro”
7. I-15121 Alessandria
Abstract
An effective doping technology for precise control of P atom injection and activation into a semiconductor substrate is presented.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01856B
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4. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
5. Organo-arsenic Molecular Layers on Silicon for High-Density Doping
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