Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1406980
Reference6 articles.
1. Fundamental limitations in microelectronics—I. MOS technology
2. Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltage
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4. Statistical 3D ‘atomistic’ simulation of decanano MOSFETs
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