Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants-Reference-Cited by-同舟云学术

Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

Published:2020 Issue:30 Volume:8 Page:10229-10237
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Perego Michele¹²³^ORCID,Caruso Francesco¹²³⁴⁵^ORCID,Seguini Gabriele¹²³^ORCID,Arduca Elisa¹²³^ORCID,Mantovan Roberto¹²³^ORCID,Sparnacci Katia⁶⁷³^ORCID,Laus Michele⁶⁷³

Affiliation:

1. CNR-IMM, Unit of Agrate Brianza

2. I-20864 Agrate Brianza

3. Italy

4. Università degli Studi di Milano

5. I-20133 Milano

6. Università del Piemonte Orientale “A. Avogadro”

7. I-15121 Alessandria

Abstract

An effective doping technology for precise control of P atom injection and activation into a semiconductor substrate is presented.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01856B

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2. Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

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4. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

5. Organo-arsenic Molecular Layers on Silicon for High-Density Doping

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