Organo-arsenic Molecular Layers on Silicon for High-Density Doping-Reference-Cited by-同舟云学术

Organo-arsenic Molecular Layers on Silicon for High-Density Doping

Published:2015-07-07 Issue:28 Volume:7 Page:15514-15521
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

O’Connell John¹²³,Verni Giuseppe Alessio¹²³,Gangnaik Anushka¹²³,Shayesteh Maryam²,Long Brenda¹²³,Georgiev Yordan M.¹²³,Petkov Nikolay¹²³,McGlacken Gerard P.¹⁴,Morris Michael A.¹²³,Duffy Ray²,Holmes Justin D.¹²³

Affiliation:

1. Department of Chemistry, University College Cork, Cork, Ireland

2. Tyndall National Institute, University College Cork, Cork, Ireland

3. AMBER@CRANN, Trinity College Dublin, Dublin 2, Ireland

4. Analytical and Biological Research Chemistry Facility, University College Cork, Cork, Ireland

Funder

Science Foundation Ireland

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b03768

Reference44 articles.

1. International Technology Roadmap for Semiconductorshttp://www.itrs.net/ITRS%201999-2014%20Mtgs,%20Presentations%20&%20Links/2013ITRS/2013Chapters/2013PIDS_Summary.pdf.

2. Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion

3. Ion beams in silicon processing and characterization

4. Shallow junction doping technologies for ULSI

5. Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates

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