Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion-Reference-Cited by-同舟云学术

Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion

Published:2014-10-03 Issue:43 Volume:2 Page:9248-9257
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Duffy Ray,Shayesteh Maryam,Thomas Kevin,Pelucchi Emanuele,Yu Ran,Gangnaik Anushka,Georgiev Yordan M.,Carolan Patrick,Petkov Nikolay,Long Brenda,Holmes Justin D.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC02018A

Reference33 articles.

1. Controlled nanoscale doping of semiconductors via molecular monolayers

2. Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

3. Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

4. Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal–Organic Source

5. High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping

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