Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates

Author:

Petkov Nikolay,Georgieva Margarita,Bugu Sinan,Duffy Ray,McCarthy Brendan,Myronov Maksym,Kelleher Ann-Marie,Maxwell Graeme,Fagas Giorgos

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. A Review of the Gate-All-around Nanosheet FET Process Opportunities;Mukesh;Electronics,2022

2. 6 Stacked Ge0.95Si0.05 nGAAFETs without parasitic channels by wet etching;Tsai,2022

3. Stacked SiGe nanosheets p-FET for Sub-3 nm logic applications;Chu;Sci. Rep.,2023

4. Scaled p-Channel Ge FinFET with Optimized Gate Stack and Record Performance Integrated on 300mm Si Wafers, Technical Digest - International Electron Devices Meeting, IEDM, 6724666, 20.1.1-20.1.4;Duriez,2013

5. A hole spin qubit in a fin field-effect transistor above 4 kelvin;Camenzind;Nat. Electron,2022

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