Abstract
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. These innovations span enablement of multiple threshold voltages and bottom dielectric isolation in addition to impact of channel geometry on the overall device performance. Current scaling challenges for GAA nanosheet FETs are reviewed and discussed. Finally, an analysis of future innovations required to continue scaling nanosheet FETs and future technologies is discussed.
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Cited by
30 articles.
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