FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design
Author:
Funder
Ministry of Science and Technology of Taiwan, R.O.C.
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1186/s11671-024-04096-4.pdf
Reference37 articles.
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3. Choi WY, Park B-G, Lee JD, Liu T-JK. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett. 2007;28(8):743–5. https://doi.org/10.1109/LED.2007.901273.
4. Ionescu AM, Riel H. Tunnel feld-efect transistors as energy-efcient electronic switches. Nature. 2011;479(7373):329–37. https://doi.org/10.1038/nature10679.
5. Molaei Imenabadi R, Saremi M, Vandenberghe WG. A novel PNPN-like Z-shaped tunnel field- effect transistor with improved ambipolar behavior and RF performance. IEEE Trans Electron Dev. 2017;64(11):4752–8. https://doi.org/10.1109/TED.2017.2755507.
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