Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation-Reference-Cited by-同舟云学术

Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation

Published:2020-08-03 Issue:34 Volume:36 Page:9993-10002
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Kennedy Noel¹,Garvey Shane¹²,Maccioni Barbara²^ORCID,Eaton Luke¹²,Nolan Michael²^ORCID,Duffy Ray²,Meaney Fintan²,Kennedy Mary³,Holmes Justin D.¹^ORCID,Long Brenda¹^ORCID

Affiliation:

1. School of Chemistry & AMBER Centre, University College Cork, Cork, T12 YN60, Ireland

2. Tyndall National Institute, Lee Maltings, University College Cork, Cork, T12 R5CP, Ireland

3. Scientific Process Development Services, Tarbert, Kerry V31 X640, Ireland

Funder

Enterprise Ireland

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.0c00408

Reference64 articles.

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3. Progress in doping semiconductor nanowires during growth

4. Challenges and opportunities in chemical functionalization of semiconductor surfaces

5. Germanium Based Field-Effect Transistors: Challenges and Opportunities

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