Enhancing semiconductor device performance using ordered dopant arrays
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/nature04086.pdf
Reference11 articles.
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2. Mizuno, T., Okamura, J. & Toriumi, A. Experimental–study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET. IEEE Trans. Electron Devices 41, 2216–2221 (1994)
3. Wong, H. S. & Taur, Y. Discrete dopant distribution effects in nanometer-scale MOSFETs. Microelectron. Reliab. 38, 1447–1456 (1998)
4. Sano, N. & Tomizawa, M. Random dopant model for three-dimensional drift-diffusion simulations in metal-oxide-semiconductor field-effect-transistors. Appl. Phys. Lett. 79, 2267–2269 (2001)
5. Ebert, Ph., Jager, N. D., Urban, K. & Weber, E. R. Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces. J. Vac. Sci. Technol. B 22, 2018–2025 (2004)
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