Evaluation of New Aminoalkoxide Precursors for Atomic Layer Deposition. Growth of Zirconium Dioxide Thin Films and Reaction Mechanism Studies-Reference-Cited by-同舟云学术

Evaluation of New Aminoalkoxide Precursors for Atomic Layer Deposition. Growth of Zirconium Dioxide Thin Films and Reaction Mechanism Studies

Published:2004-11-20 Issue:26 Volume:16 Page:5630-5636
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Matero Raija¹,Ritala Mikko¹,Leskelä Markku¹,Sajavaara Timo¹,Jones Anthony C.¹,Roberts John L.¹

Affiliation:

1. Laboratory of Inorganic Chemistry, Department of Chemistry, P.O. Box 55, and Accelerator Laboratory, P.O. Box 43, FIN-00014, University of Helsinki, Helsinki, Finland, Department of Chemistry, University of Liverpool, Liverpool L69 3ZD, U.K., and Epichem Oxides and Nitrides, Power Road, Bromborough, Wirral, Merseyside CH62 3QF, U.K.

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm030669f

Reference27 articles.

1. Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

2. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

3. Structure and stability of ultrathin zirconium oxide layers on Si(001)

4. Mist deposited high-k dielectrics for next generation MOS gates

5. Atomic layer epitaxy

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