Amidoxime-Containing Zr and Hf Atomic Layer Deposition Precursors for Metal Oxide Thin Films-Reference-Cited by-同舟云学术

Amidoxime-Containing Zr and Hf Atomic Layer Deposition Precursors for Metal Oxide Thin Films

Published:2023-12-18 Issue:1 Volume:63 Page:537-547
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Lee Ga Yeon¹,Lee Seung-Hun²,Jo In Ho²,Cho Chan-Mi¹,Shostak Svetlana³,Ryu Ji Yeon¹^ORCID,Park Bo Keun¹⁴^ORCID,Son Seung Uk⁵^ORCID,Choi Cheol Ho³^ORCID,Eom Taeyong¹^ORCID,Kim Jeong Hwan²,Chung Taek-Mo¹⁴^ORCID

Affiliation:

1. Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea

2. Department of Advanced Materials Engineering, Hanbat National University, Daejeon 34158, Republic of Korea

3. Department of Chemistry, Kyungpook National University, Daegu 41566, South Korea

4. Department of Chemical Convergence Materials, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea

5. Department of Chemistry, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea

Funder

Korea Research Institute of Chemical Technology

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.3c03455

Reference38 articles.

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4. High dielectric constant gate oxides for metal oxide Si transistors

5. Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films