Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films-Reference-Cited by-同舟云学术

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Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films

Published:2011-01-10 Issue:2 Volume:98 Page:022903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hwang Soo Min,Lee Seung Muk,Park Kyung,Lee Myung Soo,Joo Jinho,Lim Jun Hyung,Kim Hyoungsub,Yoon Jae Jin,Kim Young Dong

Funder

Ministry of Education, Culture, Sports, Science, and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3541784

Reference19 articles.

1. High-κ/Metal Gate Science and Technology

2. Band offsets and Schottky barrier heights of high dielectric constant oxides

3. Phonons and lattice dielectric properties of zirconia

4. Structural, electronic, and dielectric properties of amorphousZrO2fromab initiomolecular dynamics

5. Structure and Ionic Mobility of Zirconia at High Temperature

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