Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition-Reference-Cited by-同舟云学术

Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Published:2003-03 Issue:3 Volume:65 Page:259-272
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Tsai W.,Carter R.J.,Nohira H.,Caymax M.,Conard T.,Cosnier V.,DeGendt S.,Heyns M.,Petry J.,Richard O.,Vandervorst W.,Young E.,Zhao C.,Maes J.,Tuominen M.,Schulte W.H.,Garfunkel E.,Gustafsson T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Front End Trends, Challenges and Potential Solutions for the 180–100-nm IC Technology;Zeizoff,1999

2. 2000 Symposium on VLSI Technology;Ghani,2000

3. Hafnium and zirconium silicates for advanced gate dielectrics

4. Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS

5. L. Manchanda, M.L. Green, R.B. van Dover, M.D. Morris, A. Kerber, Y. Hu, J.-P. Han, P.J. Silverman, T.W. Sorsch, G. Weber, V. Donnelly, K. Pelhos, F. Klemens, N.A. Ciampa, A. Kornblit, Y.O. Kim, J.E. Bower, D. Barr, E. Ferry, I. Jacobson, International Electron Devices Meeting, 2000, p. 23.

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposition of Al2O3 and HfO2 for high power laser application;Journal of Alloys and Compounds;2021-04

2. Initial growth analysis of ALD Al2O3 film on hydrogen-terminated Si substrate via in situ XPS;Japanese Journal of Applied Physics;2020-01-01

3. Al2O3/ZrO2/Al2O3 High-k Dielectric Stacks on Germanium Substrates Grown by Atomic Layer Deposition at High and Low Temperatures;ECS Transactions;2019-12-18

4. Fabrication of Ge MOS with low interface trap density by ALD of Al2O3 on epitaxially grown Ge;Semiconductor Science and Technology;2018-12-13

5. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics;Chemical Reviews;2018-05-22