Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1362331
Reference5 articles.
1. Thermodynamic stability of binary oxides in contact with silicon
2. Structural properties and quasiparticle band structure of zirconia
3. The chemical vapour deposition and characterization of ZrO2 films from organometallic compounds
4. Structure and stability of ultrathin zirconium oxide layers on Si(001)
5. Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)
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