The interface of atomic layer deposited ZrO2 on Si/SiO2 from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

Author:

Saha Soumya1,Phakatkar Abhijit H.1,Jursich Gregory12,Shokuhfar Tolou1,Takoudis Christos G.13ORCID

Affiliation:

1. Department of Biomedical Engineering University of Illinois Chicago Chicago Illinois USA

2. Department of Chemistry University of Illinois Chicago Chicago Illinois USA

3. Department of Chemical Engineering University of Illinois Chicago Chicago Illinois USA

Abstract

Recent developments in inherently selective atomic layer deposition (ISALD) resulted in the deposition of amorphous ZrO2 thin film on Si with a high growth rate (2 Å/cycle). The deposited film with a high dielectric constant via ISALD may be used in semiconductor processing. However, the amorphous nature of the film and the ZrO2–SiO2/Si interface must be assessed to ensure the prevention of leakage current. There is little information available in the literature regarding the ZrO2–SiO2/Si interface of atomic layer deposition (ALD) ZrO2 film. In this study, high‐resolution transmission electron microscopy was extensively used to determine whether the film and the interface were crystalline or amorphous. It was interesting to find that a high‐energy electron beam can induce crystallinity in the amorphous as‐deposited ZrO2 film within minutes of exposure. Moreover, outward diffusion of the nucleated tetragonal ZrO2 away from the interface was also observed.

Funder

National Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

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