Molecular Dynamics Study of Explosive Crystallization of SiGe and Boron-Doped SiGe Alloys-Reference-Cited by-同舟云学术

Molecular Dynamics Study of Explosive Crystallization of SiGe and Boron-Doped SiGe Alloys

Published:2006-03-02 Issue:16 Volume:45 Page:5628-5639
ISSN:0888-5885
Container-title:Industrial & Engineering Chemistry Research
language:en
Short-container-title:Ind. Eng. Chem. Res.

Author:

Albenze Erik J.¹,Thompson Michael O.¹,Clancy Paulette¹

Affiliation:

1. Department of Chemical and Biomolecular Engineering and Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853

Publisher

American Chemical Society (ACS)

Subject

Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/ie051361w

Reference40 articles.

1. The International Technology Roadmap for Semiconductors; International Sematech: Austin, TX, 2004.

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3. Recent developments in rapid thermal processing

4. Correlation of the structure and electrical properties of ion‐implanted and laser‐annealed silicon

5. Macroscopic theory of pulsed-laser annealing. II. Dopant diffusion and segregation

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