Author:
Cho Yeongkwang,Liu Pengzhan,Jeon Sanghuck,Lee Jungryul,Bae Sunghoon,Hong Seokjun,Kim Young Hwan,Kim Taesung
Abstract
Slurry flow on the pad surface and its effects on oxide chemical mechanical polishing (CMP) performance were investigated in simulations and experiments. A concentric groove pad and the same pad with radial grooves were used to quantitatively compare the slurry saturation time (SST), material removal rate (MRR), and non-uniformity (NU) in polishing. The monitored coefficient of friction (COF) and its slope were analyzed and used to determine SSTs of 25.52 s for the concentric groove pad and 16.06 s for a certain radial groove pad. These values were well correlated with the simulation prediction, with around 5% error. Both the laminar flow and turbulent flow were included in the sliding mesh model. The back mixing effect, which delays fresh slurry supply, was found in the pressure distribution of the wafer–pad interface.
Funder
Korea Institute for Advancement of Technology grant funded by the Korea Government
Ministry of Trade, Industry and Energy
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
9 articles.
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