Experimental Strategies for Studying Tribo-Electrochemical Aspects of Chemical–Mechanical Planarization

Author:

Gamagedara Kassapa1,Roy Dipankar1ORCID

Affiliation:

1. Physics Department, Clarkson University, Potsdam, NY 13699, USA

Abstract

Chemical–mechanical planarization (CMP) is used to smoothen the topographies of a rough surface by combining several functions of tribology (friction, lubrication), chemistry, and electrochemistry (corrosion, wear, tribo-corrosion). The surface layer of interest is structurally weakened by the chemical and/or electrochemical reactions of selected additives in a polishing slurry, and the modified surface is flattened by the abrasion of a polishing pad with or without abrasive particles. The chemically active CMP slurry also serves as a lubricant for polishing and enables planarization at a microscopic level while avoiding the formation of defects at the processed surface. Applications of CMP are wide-ranging in various material-processing technologies and, specifically, it is a critical manufacturing step of integrated circuits. The CMP of metals is a significant part of this processing scheme and is associated with highly complex tribo-electrochemical mechanisms that are now additionally challenging due to various new requirements of the advanced technology nodes. The present review examines the current statuses of experimental strategies for collecting important mechanistic details of metal CMP that are necessary to design and assess CMP consumables. Both traditional and underexplored experimental techniques are discussed with illustrative results, including many previously unpublished findings for certain CMP systems of current interest.

Publisher

MDPI AG

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