Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing

Author:

Liu Pengzhan,Kang Chul,Park Kihong,Jeon Sanghuck,Wang Ziyang,Lee Hyeonjeong,Jeong Hyunjin,Lee Euihaeng,Kim TaesungORCID

Abstract

Chemical mechanical polishing (CMP) has undergone rapid advancements in global and local planarization. The synergy between the process control and the consumables is critical to overall CMP performance. In addition to optimizing consumables and equipment including a polisher, metrology, and inspection, the polishing protocol plays a crucial role in effective process management. In fabrication scenarios, protocol revision is a convenient and practical approach for problem-solving. This research focuses on the study of head sweep direction, head sweep distance, and slurry sweep effects in oxide film polishing. Sweeping toward the outside resulted in an average increase of 12.66% removal amount for ceria and 11.57% for silica compared to fixed head polishing. Moreover, a longer head sweep distance reduced non-uniformity. While the slurry sweep exhibited a non-significant effect on the removal amount, it proved valuable in optimizing the removal amount profile.

Funder

Korea Semiconductor Research Consortium

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Publisher

The Electrochemical Society

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3