N‐AlGaN/p‐InGaN/n‐GaN Heterojunction Bipolar Transistors for High Power Operation
Author:
Affiliation:
1. NTT Basic Research Laboratories, NTT Corporation, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa 243‐0198, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390125
Reference13 articles.
1. Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)
2. High hole concentrations in Mg-doped InGaN grown by MOVPE
3. High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors
4. Reduced damage of electron cyclotron resonance etching by In doping into p-GaN
5. High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
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