Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on -SiC substrates
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. A review of junction field effect transistors for high-temperature and high-power electronics
2. Growth and characterization of GaN PiN rectifiers on free-standing GaN
3. Current-voltage characteristics of p‐InGaN∕n‐GaN vertical conducting diodes on n+‐SiC substrates
4. N‐AlGaN/p‐InGaN/n‐GaN Heterojunction Bipolar Transistors for High Power Operation
5. High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors
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